• Suitable for low voltage large current drivers • Excellent hFE Linearity. • Switching Application PIN Connection Features • High hFE : hFE=200~400 • Low collector saturation voltage. : VCE(sat)=-0.5V(MAX.) TO -92L 1: Emitter 2 :Collector 3: Base Ordering Information Type NO. Marking Package Code STB205L STB 205 YWW TO-92L STB205: DEVICE CODE, .
• High hFE : hFE=200~400
• Low collector saturation voltage. : VCE(sat)=-0.5V(MAX.)
TO -92L
1: Emitter 2 :Collector 3: Base
Ordering Information
Type NO.
Marking
Package Code
STB205L
STB 205 YWW
TO-92L
STB205: DEVICE CODE, YWW(Y : Year code, WW : Weekly code)
Absolute Maximum Ratings
(Ta=25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Collector power dissipation Junction temperature Storage temperature range
* : Single pulse, tp= 300 ㎲
VCBO VCEO VEBO
IC ICP
* PC TJ Tstg
-35 -20 -5 -5 -10
1 150 -55.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB200N04 |
STMicroelectronics |
Power MOSFET | |
2 | STB200N4F3 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STB200N6F3 |
ST Microelectronics |
Power MOSFETs | |
4 | STB200NF03 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
5 | STB200NF03-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
6 | STB200NF04 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
7 | STB200NF04-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
8 | STB200NF04L |
ST Microelectronics |
N-CHANNEL STripFET II MOSFET | |
9 | STB200NF04T4 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
10 | STB200NF04T4-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
11 | STB2045C |
SMC Diode |
SCHOTTKY RECTIFIER | |
12 | STB2060C |
Sangdest Microelectronics |
SCHOTTKY RECTIFIER |