The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted.
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Excellent thermal stability Common source configuration POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive
PowerSO-10RF (formed lead)
Description
The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted i.
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ST Microelectronics |
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2 | STAP85025S |
STMicroelectronics |
N-channel enhancement-mode lateral MOSFETs | |
3 | STAP1011-180 |
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RF power transistor | |
7 | STAP57060 |
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8 | STAP57100 |
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RF power transistor | |
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