STAP1011-180 - ST Microelectronics

STAP1011-180 RF Power Transistor

The STAP1011-180 is a common source N-channel enhancement-mode lateral field-effect RF power transistor. It is designed for 1030-1090 MHz avionics applications. STAP1011-180 is mounted in STAP ST advanced PowerSO-10RF package. The STAP package was designed to offer high reliability and power capability. It has been specially optimized for RF needs and offers.

Features

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■ Excellent thermal stability Common source configuration push-pull POUT = 180W with 10 dB gain @ 1030 MHz 36 V/100 µsec - 10% Plastic package In compliance with the 2002/95/EC european directive Description The STAP1011-180 is a common source N-channel enhancement-mode lateral field-effect RF power transistor. It is designed for 1030-1090 MHz avionics applications. STAP1011-180 is mounted in STAP ST advanced PowerSO-10RF package. The STAP package was designed to offer high reliability and power capability. It has been specially optimized for RF needs and offers excellent RF performa.