STAP85025S - STMicroelectronics

STAP85025S N-channel enhancement-mode lateral MOSFETs

The STAP85025S is a common source Nchannel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at a frequency up to 1 GHz. The STAP85025S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mount.

Features

• Excellent thermal stability
• Common source configuration
• POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V
• Plastic package
• ESD protection
• In compliance with the 2002/95/EC European directive Table 1. Device summary Order code Marking Package STAP85025S STAP85025S STAP1 Packing Tube December 2015 This is information on a product in full production. DocID15795 Rev 5 1/13 www.st.com Contents Contents STAP85025S 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . .