STAP57100 - ST Microelectronics

STAP57100 RF power transistor

The STAP57100 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The STAP57100 is designed for high gain and broadband performance operating in common source mode at 28 V. Figure 1. Pin connection 1 4 5 3 2 1, 2 Drain 3 Source 4, 5.

Features

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■ Excellent thermal stability Common source configuration push-pull POUT = 100 W with 14 dB gain @ 860 MHz ST advanced PowerSO-10RF - STAP package Load mismatch 10:1 all phases In compliance with the 2002/95/EC european directive Description The STAP57100 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The STAP57100 is designed for high gain and broadband performance operating in common source mode at 28 V. Figure 1. Pin connection 1 4 5 3 2 1, 2 Drain.