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STAP85050 |
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| Part Number | STAP85050 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13... |
| Features |
■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted i... |
| Document |
 STAP85050 Data Sheet
PDF 280.01KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STAP85025 |
ST Microelectronics |
Transistors |
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| 2 | STAP85025S |
STMicroelectronics |
N-channel enhancement-mode lateral MOSFETs |
|
| 3 | STAP1011-180 |
ST Microelectronics |
RF Power Transistor |
|
| 4 | STAP16DPPS05 |
STMicroelectronics |
Low voltage 16-bit constant current LED sink driver |
|
| 5 | STAP16DPS05 |
STMicroelectronics |
Low voltage 16-bit constant current LED sink driver |
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