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STAP57045 - ST Microelectronics

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STAP57045 RF power transistor

The STAP57045 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. STAP57045 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted .

Features





■ Excellent thermal stability Common source configuration POUT = 45 W with 13 dB gain @ 945 MHz / 28 V ST advanced PowerSO-10RF-STAP package Description The STAP57045 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. STAP57045 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP1 plastic RF power package. STAP package has been specially optimized fo.

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