SSM6N16FU - Toshiba Semiconductor

SSM6N16FU N-Channel MOSFET

SSM6N16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FU High Speed Switching Applications Analog Switch Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V) Absolute Maximum Ratings (.

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mperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Marking Equivalent Circuit 6 5 4 6 5 4 Q1 DS Q2 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic ele.