SSM6N15AFU - Toshiba Semiconductor

SSM6N15AFU N-Channel MOSFET

SSM6N15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFU Load Switching Applications • • • 2.5 V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4.0 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Unit: mm (Q1, Q2 Common) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source vo.

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maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.32mm × 6) Note: 0.4 mm 0.8 mm Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 DI 1 2 3 1 Q1 Q2 2 3 Start of commercial production 2010-11 1 2014-03-01 SSM6N15AFU Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristi.