SSM6N15AFE - Toshiba Semiconductor

SSM6N15AFE Silicon N-Channel MOSFET

SSM6N15AFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFE Load Switching Applications • 2.5 V drive • N-ch 2-in-1 • Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4.0 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) 1.6±0.05 1.2±0.05 Unit: mm 1 6 1.6±0.05 1.0±0.05 0.5 0.5 0.2±0.05 Absolute Maximum Ratings (Ta = 25°C) (Q1, .

Features

y even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 3.0 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6) 0.3 mm 0.45 mm Marking 6 54 DI 123 Equivalent Circuit (top view) 6 54 Q1 Q2 1 23 1 Start o.