SSM6N05FU - Toshiba Semiconductor

SSM6N05FU N-Channel MOSFET

SSM6N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N05FU High Speed Switching Applications Unit: mm · Small package · Low on resistance : Ron = 0.8 Ω (max) (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V) · Low gate threshold voltage Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source volt.

Features

jects that come into direct contact with devices should be made of anti-static materials. 1 2002-01-17 Marking 6 5 4 DF 1 2 3 Equivalent Circuit (top view) 6 5 4 Q1 Q2 1 2 3 SSM6N05FU Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Note2: Pulse test Symbol Test Condition Min Typ. Max U.