SSM6N16FE - Toshiba Semiconductor

SSM6N16FE N-Channel MOSFET

SSM6N16FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FE High Speed Switching Applications Analog Switching Applications  Suitable for high-density mounting due to compact package  Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25.

Features

solute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6) Unit: mm JEDEC JEITA TOSHIBA ― ― 2-2N1D Weight: 3.0 mg (typ.) 0.3 mm 0.45 mm Marking 6 5 4 Equivalent Circuit 6 5 4 DS Q1 Q2 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet m.