SSM6N15FU - Toshiba Semiconductor

SSM6N15FU N-Channel MOSFET

SSM6N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FU High Speed Switching Applications Analog Switching Applications Unit: mm • Small package • Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-S.

Features

te maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Marking Equivalent Circuit (top view) 6 5 4 6 5 4 DP Q1 Q2 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-stati.