SSM5G11TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G11TU DC-DC Converter Applications • • • 4-V drive Combined a P-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage DC Drain curren.
ge and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2) Marking 5 4 Equivalen.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSM5G10TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
2 | SSM5G01TU |
Toshiba Semiconductor |
MOSFET/Diode | |
3 | SSM5G02TU |
Toshiba Semiconductor |
DC-DC Converter | |
4 | SSM5G04TU |
Toshiba Semiconductor |
DC-DC Converter | |
5 | SSM5G06FE |
Toshiba |
Silicon Epitaxial Schottky Barrier Diode | |
6 | SSM5G09TU |
Toshiba Semiconductor |
DC-DC Converter | |
7 | SSM5H01TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
8 | SSM5H03TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
9 | SSM5H05TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
10 | SSM5H06FE |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
11 | SSM5H07TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
12 | SSM5H08TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode |