SSM5G09TU - Toshiba Semiconductor

SSM5G09TU DC-DC Converter

SSM5G09TU Composite Devices Silicon P-Channel MOS (U-MOSIII)/Epitaxial Schottky Barrier SSM5G09TU 1. Applications • DC-DC Converters 2. Features (1) Combined an P-channel MOSFET and a diode in one package. (2) Low RDS(ON) and Low VF 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 130 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 200 mΩ (max) (@VGS =.

Features

(1) Combined an P-channel MOSFET and a diode in one package. (2) Low RDS(ON) and Low VF 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 130 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 200 mΩ (max) (@VGS = -2.5 V) 3. Packaging and Internal Circuit 1: Gate 2: Source 3: Anode 4: Cathode 5: Drain UFV 4. Absolute Maximum Ratings (Note) 4.1. Absolute Maximum Ratings of the MOSFET (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current Drain current (pulsed) Power dissipation Power dissipation (t = 10 s) (N.