SSM5G10TU - Toshiba Semiconductor

SSM5G10TU Silicon Epitaxial Schottky Barrier Diode

SSM5G10TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G10TU DC-DC Converter Applications • • • 1.8-V drive Combines a P-channel MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage DC Drain.

Features

h temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 m.