SSM5G11TU |
Part Number | SSM5G11TU |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | SSM5G11TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G11TU DC-DC Converter Applications • • • 4-V drive Combined a P-ch MOSFET and a Schottky barrier diode in on... |
Features |
ge and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2)
Marking
5 4
Equivalen... |
Document |
SSM5G11TU Data Sheet
PDF 925.33KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SSM5G10TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
2 | SSM5G01TU |
Toshiba Semiconductor |
MOSFET/Diode | |
3 | SSM5G02TU |
Toshiba Semiconductor |
DC-DC Converter | |
4 | SSM5G04TU |
Toshiba Semiconductor |
DC-DC Converter | |
5 | SSM5G06FE |
Toshiba |
Silicon Epitaxial Schottky Barrier Diode |