SSM5G06FE - Toshiba

SSM5G06FE Silicon Epitaxial Schottky Barrier Diode

SSM5G06FE Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5G06FE DC-DC Converter Applications • Combined a P-channel MOSFET and a Schottky barrier diode in one package. • Optimum for high-density mounting in small packages Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VD.

Features

A 2-2P1C Weight: 3 mg (Typ.) Absolute Maximum Ratings (Ta = 25°C) MOSFET, SBD COMMON Characteristics Symbol Rating Unit Storage temperature range Operating temperature range Tstg −55 to 125 °C Topr (Note3) −40 to 100 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appro.