SSM5G04TU www.DataSheet4U.com Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G04TU DC-DC Converter • • Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol.
ting −55~125 −40~85 Unit °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report an.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSM5G01TU |
Toshiba Semiconductor |
MOSFET/Diode | |
2 | SSM5G02TU |
Toshiba Semiconductor |
DC-DC Converter | |
3 | SSM5G06FE |
Toshiba |
Silicon Epitaxial Schottky Barrier Diode | |
4 | SSM5G09TU |
Toshiba Semiconductor |
DC-DC Converter | |
5 | SSM5G10TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
6 | SSM5G11TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
7 | SSM5H01TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
8 | SSM5H03TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
9 | SSM5H05TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
10 | SSM5H06FE |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
11 | SSM5H07TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
12 | SSM5H08TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode |