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SSM5G10TU |
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| Part Number | SSM5G10TU |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM5G10TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G10TU DC-DC Converter Applications • • • 1.8-V drive Combines a P-channel MOSFET and a Schottky barrier diod... |
| Features |
h temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 m... |
| Document |
 SSM5G10TU Data Sheet
PDF 906.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM5G11TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode |
|
| 2 | SSM5G01TU |
Toshiba Semiconductor |
MOSFET/Diode |
|
| 3 | SSM5G02TU |
Toshiba Semiconductor |
DC-DC Converter |
|
| 4 | SSM5G04TU |
Toshiba Semiconductor |
DC-DC Converter |
|
| 5 | SSM5G06FE |
Toshiba |
Silicon Epitaxial Schottky Barrier Diode |
|