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SSM5G09TU |
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| Part Number | SSM5G09TU |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM5G09TU Composite Devices Silicon P-Channel MOS (U-MOSIII)/Epitaxial Schottky Barrier SSM5G09TU 1. Applications • DC-DC Converters 2. Features (1) Combined an P-channel MOSFET and a diode in one pac... |
| Features |
(1) Combined an P-channel MOSFET and a diode in one package. (2) Low RDS(ON) and Low VF
2.1. MOSFET Features
(1) Low drain-source on-resistance : RDS(ON) = 130 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 200 mΩ (max) (@VGS = -2.5 V)
3. Packaging and Internal Circuit
1: Gate 2: Source 3: Anode 4: Cathode 5: Drain
UFV
4. Absolute Maximum Ratings (Note)
4.1. Absolute Maximum Ratings of the MOSFET (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current Drain current (pulsed) Power dissipation Power dissipation
(t = 10 s)
(N... |
| Document |
 SSM5G09TU Data Sheet
PDF 284.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM5G01TU |
Toshiba Semiconductor |
MOSFET/Diode |
|
| 2 | SSM5G02TU |
Toshiba Semiconductor |
DC-DC Converter |
|
| 3 | SSM5G04TU |
Toshiba Semiconductor |
DC-DC Converter |
|
| 4 | SSM5G06FE |
Toshiba |
Silicon Epitaxial Schottky Barrier Diode |
|
| 5 | SSM5G10TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode |
|