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SSM5G04TU |
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| Part Number | SSM5G04TU |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM5G04TU www.DataSheet4U.com Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G04TU DC-DC Converter • • Combined Pch MOSFET and Schottky Diode into one Package. Low ... |
| Features |
ting −55~125 −40~85 Unit °C °C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report an... |
| Document |
 SSM5G04TU Data Sheet
PDF 223.20KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM5G01TU |
Toshiba Semiconductor |
MOSFET/Diode |
|
| 2 | SSM5G02TU |
Toshiba Semiconductor |
DC-DC Converter |
|
| 3 | SSM5G06FE |
Toshiba |
Silicon Epitaxial Schottky Barrier Diode |
|
| 4 | SSM5G09TU |
Toshiba Semiconductor |
DC-DC Converter |
|
| 5 | SSM5G10TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode |
|