SSC8039GS1 - AFSEMI

SSC8039GS1 P-Channel Enhancement Mode MOSFET

Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.  Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 .

Features

VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -10A
 Applications
 Load Switch
 DCDC conversion
 NB battery
 Pin configuration
 General Description Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.
 Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-1V0 http://www.afsemi.com 1/5 Analog Future SSC8039GS1
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