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SPP11N80C3 |
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| Part Number | SPP11N80C3 |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPP11N80C3 ·FEATURES ·Ultra low effective capacitances ·Low gate charge ·Improved transconductance ·Low gate drive power loss ·100% avalanche t... |
| Features |
·Ultra low effective capacitances ·Low gate charge ·Improved transconductance ·Low gate drive power loss ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 11 7.1 33 PD Total Dissipation 156 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL... |
| Document |
 SPP11N80C3 Data Sheet
PDF 201.66KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPP11N80C3 |
Infineon Technologies |
Power Transistor |
|
| 2 | SPP11N60C2 |
Infineon Technologies |
Power Transistor |
|
| 3 | SPP11N60C3 |
Infineon Technologies |
Power Transistor |
|
| 4 | SPP11N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | SPP11N60CFD |
Infineon Technologies |
Power Transistor |
|