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SPP11N65C3 |
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| Part Number | SPP11N65C3 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transc... |
| Features |
Unit A
A mJ
0.6
0.6
4
4
A
±20
±20 V
±30
±30
125
33 W
-55...+150
°C
Rev. 2.91
Page 1
2009-11-30
SPP11N65C3,SPA11N65C3 SPI11N65C3
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s
Symbol dv/... |
| Document |
 SPP11N65C3 Data Sheet
PDF 569.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPP11N65C3 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | SPP11N60C2 |
Infineon Technologies |
Power Transistor |
|
| 3 | SPP11N60C3 |
Infineon Technologies |
Power Transistor |
|
| 4 | SPP11N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | SPP11N60CFD |
Infineon Technologies |
Power Transistor |
|