SPP11N60C3 INCHANGE N-Channel MOSFET Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

SPP11N60C3

INCHANGE
SPP11N60C3
SPP11N60C3 SPP11N60C3
zoom Click to view a larger image
Part Number SPP11N60C3
Manufacturer INCHANGE
Description isc N-Channel MOSFET Transistor SPP11N60C3,ISPP11N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot...
Features
·Static drain-source on-resistance: RDS(on) ≤0.38Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Ultra low gate charge
·High peak current capability
·Improved transconductance
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 33 PD Total Dissipation @TC=25℃ 125 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -5...

Document Datasheet SPP11N60C3 Data Sheet
PDF 243.38KB
Distributor Stock Price Buy

Similar Datasheet

No. Partie # Fabricant Description Fiche Technique
1 SPP11N60C2
Infineon Technologies
Power Transistor Datasheet
2 SPP11N60C3
Infineon Technologies
Power Transistor Datasheet
3 SPP11N60CFD
Infineon Technologies
Power Transistor Datasheet
4 SPP11N60CFD
INCHANGE
N-Channel MOSFET Datasheet
5 SPP11N60S5
INCHANGE
N-Channel MOSFET Datasheet
More datasheet from INCHANGE



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact