Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPU07N60S5 SPD07N60S5 VDS RDS(on) ID PG-TO252 600 V 0.6 Ω 7.3 A PG-TO251 2 3 1 3 2 1 Type SPU.
-55... +150
Unit A
mJ
A V W °C
Rev. 2.6
Page 1
2013-0510
SPU07N60S5 SPD07N60S5
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 7.3 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature,
*) 1.6 mm (0.063 in.) from case for 10s
Symbol dv/dt
Value 20
Unit V/ns
Symbol
RthJC RthJA RthJA
Tsold
Values
Unit
min. typ. max.
-
-
1.5 K/W
-
-
75
-
-
75
-
-
50
-
- 260 °C
Electrical Characte.
isc N-Channel MOSFET Transistor SPD07N60S5,ISPD07N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enha.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPD07N60C2 |
Infineon Technologies |
Cool MOS Power Transistor | |
2 | SPD07N60C2 |
Infineon Technologies |
Power Transistor | |
3 | SPD07N60C3 |
Infineon Technologies |
Power Transistor | |
4 | SPD07N60C3 |
INCHANGE |
N-Channel MOSFET | |
5 | SPD07N20 |
Infineon Technologies |
Power Transistor | |
6 | SPD07N20G |
INCHANGE |
N-Channel MOSFET | |
7 | SPD07N20G |
Infineon |
Power Transistor | |
8 | SPD005G |
Smartec |
(SPD Series) Smartec Pressure Sensor | |
9 | SPD01510KS |
SiPower |
Spandard Recovery Diodes | |
10 | SPD01520KS |
SiPower |
Spandard Recovery Diodes | |
11 | SPD01530KS |
SiPower |
Spandard Recovery Diodes | |
12 | SPD01540KS |
SiPower |
Spandard Recovery Diodes |