SPD07N20 - Infineon Technologies

SPD07N20 Power Transistor

SIPMOS® Power Transistor Features • N channel • Enhancement mode • Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current • dv/dt rated SPD 07N20 G VDS 200 V RDS(on) 0.4 Ω ID 7A 1 23 2 1 3 Type SPD07N20 G SPU07N20 G Package PG-TO252 PG-TO251 Pb-free Yes Yes Packaging Tape and Reel Tube P.

Features

• N channel
• Enhancement mode
• Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
• dv/dt rated SPD 07N20 G VDS 200 V RDS(on) 0.4 Ω ID 7A 1 23 2 1 3 Type SPD07N20 G SPU07N20 G Package PG-TO252 PG-TO251 Pb-free Yes Yes Packaging Tape and Reel Tube Pin 1 Pin 2 Pin 3 G D S Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current TC = 25 ˚C Avalanche energy, single pulse ID = 7 A, VDD = 50 V, RGS = 25 Ω IDpulse EAS Aval.