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SPD07N60S5 |
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| Part Number | SPD07N60S5 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor SPD07N60S5,ISPD07N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d... |
| Features |
·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.3 IDM Drain Current-Single Pulsed 14.6 PD Total Dissipation @TC=25℃ 83 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rt... |
| Document |
 SPD07N60S5 Data Sheet
PDF 239.53KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPD07N60S5 |
Infineon Technologies |
Power Transistor |
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| 2 | SPD07N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
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| 3 | SPD07N60C2 |
Infineon Technologies |
Power Transistor |
|
| 4 | SPD07N60C3 |
Infineon Technologies |
Power Transistor |
|
| 5 | SPD07N60C3 |
INCHANGE |
N-Channel MOSFET |
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