and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
100A/µs, Tjmax=150°C Gate source voltage Power dissipation, TC = 25°C Operating and storage temperature Page 1 2002-10-07 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA SPD07N60C2 SPU07N60C2 Symbol mi.
and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information o.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPD07N60C3 |
Infineon Technologies |
Power Transistor | |
2 | SPD07N60C3 |
INCHANGE |
N-Channel MOSFET | |
3 | SPD07N60S5 |
Infineon Technologies |
Power Transistor | |
4 | SPD07N60S5 |
INCHANGE |
N-Channel MOSFET | |
5 | SPD07N20 |
Infineon Technologies |
Power Transistor | |
6 | SPD07N20G |
INCHANGE |
N-Channel MOSFET | |
7 | SPD07N20G |
Infineon |
Power Transistor | |
8 | SPD005G |
Smartec |
(SPD Series) Smartec Pressure Sensor | |
9 | SPD01510KS |
SiPower |
Spandard Recovery Diodes | |
10 | SPD01520KS |
SiPower |
Spandard Recovery Diodes | |
11 | SPD01530KS |
SiPower |
Spandard Recovery Diodes | |
12 | SPD01540KS |
SiPower |
Spandard Recovery Diodes |