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isc N-Channel MOSFET Transistor SPD07N20G,ISPD07N20G ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO.
·Static drain-source on-resistance:
RDS(on)≤0.4Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
7
IDM
Drain Current-Single Pulsed
28
PD
Total Dissipation @TC=25℃
40
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHA.
SPD07N20G - Infineon
SIPMOS® Power Transistor Features • N channel • Enhancement mode • Avalanche rated Product Summary Drain source voltag.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPD07N20 |
Infineon Technologies |
Power Transistor |
|
| 2 | SPD07N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 3 | SPD07N60C2 |
Infineon Technologies |
Power Transistor |
|
| 4 | SPD07N60C3 |
Infineon Technologies |
Power Transistor |
|
| 5 | SPD07N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | SPD07N60S5 |
Infineon Technologies |
Power Transistor |
|
| 7 | SPD07N60S5 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | SPD005G |
Smartec |
(SPD Series) Smartec Pressure Sensor |
|
| 9 | SPD01510KS |
SiPower |
Spandard Recovery Diodes |
|
| 10 | SPD01520KS |
SiPower |
Spandard Recovery Diodes |
|
| 11 | SPD01530KS |
SiPower |
Spandard Recovery Diodes |
|
| 12 | SPD01540KS |
SiPower |
Spandard Recovery Diodes |
|