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SPD07N60S5 |
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| Part Number | SPD07N60S5 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • ... |
| Features |
-55... +150
Unit A
mJ
A V W °C
Rev. 2.6
Page 1
2013-0510
SPU07N60S5 SPD07N60S5
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 7.3 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, *) 1.6 mm (0.063 in.) from case for 10s
Symbol dv/dt
Value 20
Unit V/ns
Symbol
RthJC RthJA RthJA
Tsold
Values
Unit
min. typ. max.
-
-
1.5 K/W
-
-
75
-
-
75
-
-
50
-
- 260 °C
Electrical Characte... |
| Document |
 SPD07N60S5 Data Sheet
PDF 806.32KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPD07N60S5 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | SPD07N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 3 | SPD07N60C2 |
Infineon Technologies |
Power Transistor |
|
| 4 | SPD07N60C3 |
Infineon Technologies |
Power Transistor |
|
| 5 | SPD07N60C3 |
INCHANGE |
N-Channel MOSFET |
|