SPA2118Z - RF Micro Devices

SPA2118Z POWER AMPLIFIER

RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed fo.

Features

 High Linearity Performance
 +20.7dBm, IS-95 CDMA Channel Power at -55dBc ACP
 +47dBm Typ. OIP3
 High Gain: 33dB Typ.
 On-Chip Active Bias Control
 Patented high Reliability GaAs HBT Technology
 Surface-Mountable Plastic Package Applications
 IS-95 CDMA Systems
 Multi-Carrier Applications
 AMPS, ISM Applications Parameter Frequency of Operation Output Power at 1dB Compression Adjacent Channel Power Min. 810 Specification Typ. 900 29.0 -55.0 Small Signal Gain 31.5 Input VSWR Output Third Order Intercept Point Noise Figure Device Current 360 Device Voltage Thermal Resistance (J.