AND APPLICATION 1.1 DESCRIPTION 1.2 APPLICATION "SPA" Surface Mount Silicon Microphone with Maximum RF Protection - Halogen Free Consumer electronics 2. PART MARKING Identification Number Convention S 4 1 5 2 6 3 7 S: Manufacturing Location "S" - Knowles Electronics Suzhou Suzhou, China "No Alpha Character" - Knowles Electronics Itasca, IL USA "E" - Engine.
asheet http://www.datasheet4u.com/ SPA2410LR5H-B 6. FREQUENCY RESPONSE CURVE Knowles Acoustics, a division of Knowles Electronics, LLC. Revision: B Release Level: ACTIVE Sheet 3 of 10 Free Datasheet http://www.datasheet4u.com/ SPA2410LR5H-B 7. MECHANICAL SPECIFICATIONS A 0.68 (2X) 0.30 (2X) 0.54 1.22 1 2 0.20 X 45° (2X) R0.25 "W" 1 "L" "H" 2.92 1.52 0.90 (2X) 1.55 0.95 3 B "AP" 0.10 A B C 1.07 (2X) 2.07 R0.28 C Note: Dimensions are in milimeters unless otherwise specified. Tolerance 0.15mm unless otherwise specified. Revision: B Release Level: ACTIVE Sheet 4 of 10 Knowles Acoust.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPA20N60C2 |
Infineon Technologies |
Cool MOS Power Transistor | |
2 | SPA20N60C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
3 | SPA20N60C3 |
INCHANGE |
N-Channel MOSFET | |
4 | SPA20N60CFD |
Infineon Technologies |
Power Transistor | |
5 | SPA20N60CFD |
INCHANGE |
N-Channel MOSFET | |
6 | SPA20N65C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
7 | SPA20N65C3 |
INCHANGE |
N-Channel MOSFET | |
8 | SPA2118Z |
RF Micro Devices |
POWER AMPLIFIER | |
9 | SPA21N50C3 |
INCHANGE |
N-Channel MOSFET | |
10 | SPA21N50C3 |
Infineon Technologies |
Power Transistor | |
11 | SPA2318Z |
RF Micro Devices |
POWER AMPLIFIER | |
12 | SPA-1118 |
Sirenza Microdevices |
Power Amplifier |