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SPA2118Z |
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| Part Number | SPA2118Z |
| Manufacturer | RF Micro Devices |
| Description | RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular ... |
| Features |
High Linearity Performance +20.7dBm, IS-95 CDMA Channel Power at -55dBc ACP +47dBm Typ. OIP3 High Gain: 33dB Typ. On-Chip Active Bias Control Patented high Reliability GaAs HBT Technology Surface-Mountable Plastic Package Applications IS-95 CDMA Systems Multi-Carrier Applications AMPS, ISM Applications Parameter Frequency of Operation Output Power at 1dB Compression Adjacent Channel Power Min. 810 Specification Typ. 900 29.0 -55.0 Small Signal Gain 31.5 Input VSWR Output Third Order Intercept Point Noise Figure Device Current 360 Device Voltage Thermal Resistance (J... |
| Document |
 SPA2118Z Data Sheet
PDF 324.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPA21N50C3 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | SPA21N50C3 |
Infineon Technologies |
Power Transistor |
|
| 3 | SPA20N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 4 | SPA20N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 5 | SPA20N60C3 |
INCHANGE |
N-Channel MOSFET |
|