SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220FP P G-TO262 560 0.19 21 PG-TO220 V .
tive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt Rev. 3.2 7) A V -55...+150 SPP21N50C3 SPI21N50C3, SPA21N50C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 400 V, ID = 21 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footp.
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPA2118Z |
RF Micro Devices |
POWER AMPLIFIER | |
2 | SPA20N60C2 |
Infineon Technologies |
Cool MOS Power Transistor | |
3 | SPA20N60C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
4 | SPA20N60C3 |
INCHANGE |
N-Channel MOSFET | |
5 | SPA20N60CFD |
Infineon Technologies |
Power Transistor | |
6 | SPA20N60CFD |
INCHANGE |
N-Channel MOSFET | |
7 | SPA20N65C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
8 | SPA20N65C3 |
INCHANGE |
N-Channel MOSFET | |
9 | SPA2318Z |
RF Micro Devices |
POWER AMPLIFIER | |
10 | SPA2410LR5H-B |
Knowles Acoustics |
Microphone | |
11 | SPA-1118 |
Sirenza Microdevices |
Power Amplifier | |
12 | SPA-1118Z |
Sirenza Microdevices |
Power Amplifier |