and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, c.
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
Product Summary VDS RDS(on),max ID1)
600 V 0.22 W 20.7 A
• Ultra low gate charge
• Extreme dv /dt rated
PG-TO220-3-31
• High peak current capability
• Periodic avalanche rated
• Qualified for industrial grade applications according to JEDEC0)
• Pb-free lead plating; RoHS compliant
Type SPA20N60CFD
Package
Ordering Code Marking
PG-TO220-3-31 SP000216361 20N60CFD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous dra.
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPA20N60CFD ·FEATURES ·With TO-220F package ·Low input capacita.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPA20N60C2 |
Infineon Technologies |
Cool MOS Power Transistor | |
2 | SPA20N60C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
3 | SPA20N60C3 |
INCHANGE |
N-Channel MOSFET | |
4 | SPA20N65C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
5 | SPA20N65C3 |
INCHANGE |
N-Channel MOSFET | |
6 | SPA2118Z |
RF Micro Devices |
POWER AMPLIFIER | |
7 | SPA21N50C3 |
INCHANGE |
N-Channel MOSFET | |
8 | SPA21N50C3 |
Infineon Technologies |
Power Transistor | |
9 | SPA2318Z |
RF Micro Devices |
POWER AMPLIFIER | |
10 | SPA2410LR5H-B |
Knowles Acoustics |
Microphone | |
11 | SPA-1118 |
Sirenza Microdevices |
Power Amplifier | |
12 | SPA-1118Z |
Sirenza Microdevices |
Power Amplifier |