SPA20N65C3 - Infineon Technologies

SPA20N65C3 Cool MOS Power Transistor

SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID P-TO262-3-1 P-TO220-3-31 650 0.19 2.

Features

ce voltage A V W Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C 208 34.5 Operating and storage temperature T j , Tstg -55...+150 °C Page 1 2003-08-15 SPP20N65C3, SPA20N65C3 SPI20N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 20.7 A, T j = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol min. RthJC Values typ. max. Unit Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version.