These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(.
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SC-59 saves board space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize 7’ inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1 Pulsed Drain Current 2
TA=25°C TA=70°C
Power Dissipation 1
TA=25°C TA=70°C
Operating Junction and Storage Temperature Range
VDS VGS ID
IDM PD
TJ, TSTG
Thermal Resistance Data
Maximum Jun.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMG2305P |
SeCoS |
P-Channel MOSFET | |
2 | SMG2305PE-C |
SeCoS |
P-Channel MOSFET | |
3 | SMG2305 |
SeCoS |
P-Channel MosFET | |
4 | SMG2305-C |
SeCoS |
P-Channel Enhancement MOSFET | |
5 | SMG2305A |
SeCoS |
P-Channel MosFET | |
6 | SMG2300 |
SeCoS |
N-Channel MosFET | |
7 | SMG2301 |
SeCoS |
P-Channel MosFET | |
8 | SMG2301P |
SeCoS |
P-Channel MOSFET | |
9 | SMG2302 |
SeCoS |
N-Channel MosFET | |
10 | SMG2302N |
SeCoS |
N-Channel MOSFET | |
11 | SMG2303 |
SeCoS |
P-Channel MosFET | |
12 | SMG2304 |
SeCoS |
N-Channel MosFET |