The SMG2304 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. L 3 S Top View 21 B D G Features CJ * Reliable And Rugged H * Super High Dense Cell Design For Extremely Low RDS(ON) Drain K Applications Gate Source D * Power Management in Notebook Computer * Protable Equipment * Battery P.
CJ
* Reliable And Rugged
H
* Super High Dense Cell Design For Extremely Low RDS(ON)
Drain
K
Applications
Gate Source
D
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
G
SC-59 Dim Min Max
A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm
Marking : 2304
S
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3 [email protected] Continuous Drain Current,3 [email protected] Pulsed Drain Current Total Power Dissipation Linear De.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMG2300 |
SeCoS |
N-Channel MosFET | |
2 | SMG2301 |
SeCoS |
P-Channel MosFET | |
3 | SMG2301P |
SeCoS |
P-Channel MOSFET | |
4 | SMG2302 |
SeCoS |
N-Channel MosFET | |
5 | SMG2302N |
SeCoS |
N-Channel MOSFET | |
6 | SMG2303 |
SeCoS |
P-Channel MosFET | |
7 | SMG2304A |
SeCoS |
N-Channel MosFET | |
8 | SMG2305 |
SeCoS |
P-Channel MosFET | |
9 | SMG2305-C |
SeCoS |
P-Channel Enhancement MOSFET | |
10 | SMG2305A |
SeCoS |
P-Channel MosFET | |
11 | SMG2305P |
SeCoS |
P-Channel MOSFET | |
12 | SMG2305PE |
SeCoS |
P-Channel MOSFET |