A L * The SMG2300 provide the designer with best combination S of fast switching, low on-resistance and cost-effectiveness. * The SMG2300 is universally used for all commercial-industrial surface mount applications. 3 Top View 21 B D G Features * Low on-resistance * Capable of 2.5V gate drive * Small package outline C H Drain Gate Source J K D SC-59.
* Low on-resistance
* Capable of 2.5V gate drive
* Small package outline
C
H Drain
Gate Source
J K
D
SC-59 Dim Min Max
A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2
Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID @TA=25 ID @TA=70
IDM PD @TA=25
Tj, Tstg
Thermal Data
Parameter Thermal Resi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMG2301 |
SeCoS |
P-Channel MosFET | |
2 | SMG2301P |
SeCoS |
P-Channel MOSFET | |
3 | SMG2302 |
SeCoS |
N-Channel MosFET | |
4 | SMG2302N |
SeCoS |
N-Channel MOSFET | |
5 | SMG2303 |
SeCoS |
P-Channel MosFET | |
6 | SMG2304 |
SeCoS |
N-Channel MosFET | |
7 | SMG2304A |
SeCoS |
N-Channel MosFET | |
8 | SMG2305 |
SeCoS |
P-Channel MosFET | |
9 | SMG2305-C |
SeCoS |
P-Channel Enhancement MOSFET | |
10 | SMG2305A |
SeCoS |
P-Channel MosFET | |
11 | SMG2305P |
SeCoS |
P-Channel MOSFET | |
12 | SMG2305PE |
SeCoS |
P-Channel MOSFET |