SMG2303 - SeCoS

SMG2303 P-Channel MosFET

A L The SMG2303 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Features * Super high dense cell design for extremely low RDS(ON) * Reliable and rugged Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System 3 S Top View 21 B D G C H Drain Gate Source .

Features

* Super high dense cell design for extremely low RDS(ON)
* Reliable and rugged Applications
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System 3 S Top View 21 B D G C H Drain Gate Source G Marking : 2303 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Drain Current 3 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID@TA=25 oC ID@TA=70 oC IDM PD@TA=25 oC Tj, Tstg J K D SC-59 Dim Min Max A 2.70 3.10 B 1.4.