These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper lead frame SC-59 saves board space. Fast switching speed. High pe.
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper lead frame SC-59 saves board space.
Fast switching speed.
High performance trench technology.
Application
DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize 7’ inch
SC-59
A
L
3
Top View
CB
12
KE
1
D F GH
3 2
J
REF.
A B C D E F
Millimeter
Min.
2.70 2.25 1.30
Max.
3.10 3.00 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G H J .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMG2302 |
SeCoS |
N-Channel MosFET | |
2 | SMG2300 |
SeCoS |
N-Channel MosFET | |
3 | SMG2301 |
SeCoS |
P-Channel MosFET | |
4 | SMG2301P |
SeCoS |
P-Channel MOSFET | |
5 | SMG2303 |
SeCoS |
P-Channel MosFET | |
6 | SMG2304 |
SeCoS |
N-Channel MosFET | |
7 | SMG2304A |
SeCoS |
N-Channel MosFET | |
8 | SMG2305 |
SeCoS |
P-Channel MosFET | |
9 | SMG2305-C |
SeCoS |
P-Channel Enhancement MOSFET | |
10 | SMG2305A |
SeCoS |
P-Channel MosFET | |
11 | SMG2305P |
SeCoS |
P-Channel MOSFET | |
12 | SMG2305PE |
SeCoS |
P-Channel MOSFET |