The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on).
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SC-59 saves board space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize 7’ inch
SC-59
A
L
3
Top View
CB
12
KE
1
D F GH
3 2
J
REF.
A B C D E F
Millimeter
Min. 2.70 2.25 1.30
Max. 3.10 3.00 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G H J K L
Millimeter
Min. Max. 0.10 REF. 0.40 REF.
0.10 0.20 0.45 0.55
0.85 1.15
Drain
Gate
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMG2301 |
SeCoS |
P-Channel MosFET | |
2 | SMG2300 |
SeCoS |
N-Channel MosFET | |
3 | SMG2302 |
SeCoS |
N-Channel MosFET | |
4 | SMG2302N |
SeCoS |
N-Channel MOSFET | |
5 | SMG2303 |
SeCoS |
P-Channel MosFET | |
6 | SMG2304 |
SeCoS |
N-Channel MosFET | |
7 | SMG2304A |
SeCoS |
N-Channel MosFET | |
8 | SMG2305 |
SeCoS |
P-Channel MosFET | |
9 | SMG2305-C |
SeCoS |
P-Channel Enhancement MOSFET | |
10 | SMG2305A |
SeCoS |
P-Channel MosFET | |
11 | SMG2305P |
SeCoS |
P-Channel MOSFET | |
12 | SMG2305PE |
SeCoS |
P-Channel MOSFET |