www.vishay.com SiR472ADP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. 0.0090 at VGS = 10 V 0.0115 at VGS = 4.5 V ID (A) a, g 18 18 Qg (TYP.) 9 nC PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 Top View 5.15 mm 1 2S 3S 4S G Bottom View Ordering Information: SiR472ADP-T1-GE3 (Lead (Pb)-free and Halogen-f.
• TrenchFET® Gen IV power MOSFET
• 100 % Rg and UIS tested
• Optimized for high-side switching in
synchronous buck converters
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• DC/DC conversion
• Battery protection
• Load switching
• DC/AC inverters
D G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
TC = 25 °C
VDS VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C TA = 70 °C
ID
Pulsed Drain Current (t = 300 μs) Continuou.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SIR472DP |
Vishay Siliconix |
N-Channel MOSFET | |
2 | SIR470DP |
Vishay Siliconix |
N-Channel MOSFET | |
3 | SIR474DP |
Vishay Siliconix |
N-Channel MOSFET | |
4 | SIR402DP |
Vishay Siliconix |
N-Channel MOSFET | |
5 | SiR404DP |
Vishay |
N-Channel MOSFET | |
6 | SIR406DP |
Vishay |
N-Channel MOSFET | |
7 | SIR410DP |
Vishay Siliconix |
N-Channel MOSFET | |
8 | SIR414DP |
Vishay Siliconix |
N-Channel MOSFET | |
9 | SiR4156LDP |
Vishay |
N-Channel MOSFET | |
10 | SIR416DP |
Vishay |
N-Channel 40-V (D-S) MOSFET | |
11 | SIR418DP |
Vishay |
N-Channel 40-V (D-S) MOSFET | |
12 | SIR422DP |
Vishay |
N-Channel 40-V (D-S) MOSFET |