SIR470DP - Vishay Siliconix

SIR470DP N-Channel MOSFET

New Product SiR470DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.0023 at VGS = 10 V 0.00265 at VGS = 4.5 V ID (A)a 60 60 Qg (Typ.) 45.5 nC FEATURES • • • • Halogen-free TrenchFET® Gen III Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT PowerPAK® SO-8 APPLICATIONS • Secondary Side Synchronous Rectif.

Features

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• Halogen-free TrenchFET® Gen III Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT PowerPAK® SO-8 APPLICATIONS
• Secondary Side Synchronous Rectification
• Power Supply 6.15 mm S 1 2 3 S S 5.15 mm D G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SiR470DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VG.