SIDC19D60SIC3 - Infineon Technologies AG

SIDC19D60SIC3 Silicon Carbide Schottky Diode

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strasse 53 D-81541 München © Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given t.

Features

• Worlds first 600V Schottky diode
• Revolutionary semiconductor material Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on the switching behavior
• Ideal diode for Power Factor Correction
• No forward recovery Applications:
• SMPS, PFC, snubber A C Chip Type SIDC19D60SIC3 VBR 600V IF 6A Die Size 1.38 x 1.38 mm2 Package sawn on foil Ordering Code Q67050-A4162A104 MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization C.