AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strasse 53 D-81541 München © Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given t.
• Worlds first 600V Schottky diode
• Revolutionary semiconductor material Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on the switching behavior
• Ideal diode for Power Factor Correction
• No forward recovery Applications:
• SMPS, PFC, snubber
A
C
Chip Type
SIDC11D60SIC3
VBR 600V
IF 4A
Die Size 1.15 x 0.97 mm2
Package sawn on foil
Ordering Code Q67050-A4161A104
MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SIDC112D170H |
Infineon |
Fast switching diode | |
2 | SIDC105D120H8 |
Infineon |
Fast switching diode | |
3 | SIDC10D120H8 |
Infineon |
Fast switching diode | |
4 | SIDC130D170H |
Infineon |
Fast switching diode | |
5 | SIDC14D120F6 |
Infineon |
Fast switching diode | |
6 | SIDC14D120H8 |
Infineon |
Fast switching diode | |
7 | SIDC14D60C8 |
Infineon |
Fast switching diode | |
8 | SIDC14D65C8 |
Infineon |
Fast switching diode | |
9 | SIDC161D170H |
Infineon |
Fast switching diode | |
10 | SIDC16D60SIC3 |
Infineon Technologies AG |
Silicon Carbide Schottky Diode | |
11 | SIDC19D60SIC3 |
Infineon Technologies AG |
Silicon Carbide Schottky Diode | |
12 | SIDC02D60C8 |
Infineon |
Fast switching diode |