SIDC112D170H - Infineon

SIDC112D170H Fast switching diode

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 REVISION HISTORY Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given i.

Features

• 1700V technology, Emitter Controlled Diode 3th generation, 200 µm chip
• soft, fast switching
• low reverse recovery charge
• small temperature coefficient SIDC112D170H A This chip is used for:
• power modules C Applications:
• resonant applications, drives Chip Type SIDC112D170H VR IF 1700V 205A Die Size 11.8 x 9.52 mm2 Package sawn on foil Mechanical Parameters Raster size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 11.8 x 9.52 112.