AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strasse 53 D-81541 München © Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to.
• 1200V EMCON technology 120 µm chip
• soft, fast switching
This chip is used for:
• EUPEC power modules and discrete devices
A
• low reverse recovery charge
• small temperature coefficient
Applications:
C
• SMPS, resonant applications,
drives
Chip Type SIDC14D120F6
VR
IF
Die Size
1200V 15A
3.8 x 3.8 mm2
Package Ordering Code
sawn on foil
Q67050-A4170A001
MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metallisation
Cathode metallisation
Die bond Wire bond Reject.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SIDC14D120H8 |
Infineon |
Fast switching diode | |
2 | SIDC14D60C8 |
Infineon |
Fast switching diode | |
3 | SIDC14D65C8 |
Infineon |
Fast switching diode | |
4 | SIDC105D120H8 |
Infineon |
Fast switching diode | |
5 | SIDC10D120H8 |
Infineon |
Fast switching diode | |
6 | SIDC112D170H |
Infineon |
Fast switching diode | |
7 | SIDC11D60SIC3 |
Infineon Technologies AG |
Silicon Carbide Schottky Diode | |
8 | SIDC130D170H |
Infineon |
Fast switching diode | |
9 | SIDC161D170H |
Infineon |
Fast switching diode | |
10 | SIDC16D60SIC3 |
Infineon Technologies AG |
Silicon Carbide Schottky Diode | |
11 | SIDC19D60SIC3 |
Infineon Technologies AG |
Silicon Carbide Schottky Diode | |
12 | SIDC02D60C8 |
Infineon |
Fast switching diode |